Possibility of Transport Through a Single Acceptor in a Gate-All-Around Silicon Nanowire PMOSFET-Reference-Cited by-同舟云学术

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Possibility of Transport Through a Single Acceptor in a Gate-All-Around Silicon Nanowire PMOSFET

Published:2009-11 Issue:6 Volume:8 Page:713-717
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Byoung Hak Hong ,Young Chai Jung ,Jae Sung Rieh ,Sung Woo Hwang ,Keun Hwi Cho ,Yeo K.H.,Suk S.D.,Yeoh Y.Y.,Li M.,Dong-Won Kim ,Donggun Park ,Kyung Seok Oh ,Won-Seong Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/5324587/04907082.pdf?arnumber=4907082

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport spectroscopy from Hubbard bands of dopant-induced quantum dot array to one-dimensional conduction subband;Journal of Physics D: Applied Physics;2022-08-05

2. Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors;Chinese Physics B;2018-09

3. Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor;Journal of Applied Physics;2014-09-28

4. Current-voltage spectroscopy of dopant-induced quantum-dots in heavily n-doped junctionless nanowire transistors;Applied Physics Letters;2014-03-31

5. Gate-All-Around Nanowire MOSFET With Catalytic Metal Gate For Gas Sensing Applications;IEEE Transactions on Nanotechnology;2013-11

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