Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor-Reference-Cited by-同舟云学术

Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor

Published:2014-09-28 Issue:12 Volume:116 Page:124505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang Hao¹,Han Weihua¹,Li Xiaoming¹,Zhang Yanbo¹,Yang Fuhua¹

Affiliation:

1. Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China

Funder

National Basic Research Program of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896586

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