The Role of Geometry Parameters and Fin Aspect Ratio of Sub-20nm SOI-FinFET: An Analysis Towards Analog and RF Circuit Design
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/7102804/07064756.pdf?arnumber=7064756
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