Device Design Engineering for Optimum Analog/RF Performance of Nanoscale DG MOSFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx5/7729/6294481/06256737.pdf?arnumber=6256737
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4. The Investigation of graded channel effect on Analog/Linearity Parameter Analysis of junctionless surrounded gate graded channel MOSFET;2023-04-04
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