Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications-Reference-Cited by-同舟云学术

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Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications

Published:2009-09 Issue:5 Volume:8 Page:654-658
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Younghwan Son ,Chang-Ki Baek ,In-Shik Han ,Han-Soo Joo ,Tae-Gyu Goo ,Ooksang Yoo ,Wonho Choi ,Hee-Hwan Ji ,Hi-Deok Lee ,Kim D.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/5233080/04689411.pdf?arnumber=4689411

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ПРОЦЕССЫ НИТРИЗАЦИИ ПОДЗАТВОРНОГО ДИЭЛЕКТРИКА И ИХ ВЛИЯНИЕ НА ИЗМЕНЕНИЕ ПЛОТНОСТИ МЕЖСЛОЙНЫХ СОСТОЯНИЙ МДП-СТРУКТУР;Physical and Chemical Aspects of the Study of Clusters, Nanostructures and Nanomaterials;2023-12-15

2. Investigation of Gate Sidewall Spacer Optimization From OFF-State Leakage Current Perspective in 3-nm Node Device;IEEE Transactions on Electron Devices;2019-06

3. Characterization of oxide trap density with the charge pumping technique in dual-layer gate oxide;IEICE Electronics Express;2017

4. Characterization of Border Trap Density With the Multifrequency Charge Pumping Technique in Dual-Layer Gate Oxide;IEEE Transactions on Electron Devices;2011-08

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