InGaN/GaN Quantum Dots on Silicon With Coalesced Nanowire Buffer Layers: A Potential Technology for Visible Silicon Photonics-Reference-Cited by-同舟云学术

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InGaN/GaN Quantum Dots on Silicon With Coalesced Nanowire Buffer Layers: A Potential Technology for Visible Silicon Photonics

Published:2020 Issue: Volume:19 Page:571-574
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Das Debabrata^ORCID,Aiello Anthony^ORCID,Guo Wei^ORCID,Bhattacharya Pallab

Funder

University of Michigan College of Engineering Blue Sky Research Program

Rackham Merit Fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/8933521/09136739.pdf?arnumber=9136739

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanocomposite films based on poly(N vinylcarbazole) and CdSe/CdS hybrid quantum dots;AIP Conference Proceedings;2024

2. Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response;Advanced Materials Technologies;2023-05-16

3. Anisotropic Two-Photon Excited Photoluminescence and Optical Constants of InGaN Nanowires;ACS Applied Optical Materials;2023-05-02

4. Nanowire Template Assisted Epitaxy of Ultrawide Bandgap III-Nitrides on Si: Role of the Nanowire Template;ACS Applied Optical Materials;2023-03-14

5. Silicon-based InGaN/GaN Multiple Quantum Well Waveguide Directional Coupler Photonic Integrated Chip for Visible Light Communication;J ELECTRON INF TECHN;2022

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