Nonquasi-Static Effects and the Role of Kinetic Inductance in Ballistic Carbon-Nanotube Transistors-Reference-Cited by-同舟云学术

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Nonquasi-Static Effects and the Role of Kinetic Inductance in Ballistic Carbon-Nanotube Transistors

Published:2010-07 Issue:4 Volume:9 Page:449-463
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Paydavosi Navid,Zargham Mohammad Meysam,Holland Kyle David,Dublanko Curtis Michael,Vaidyanathan Mani

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/5504884/05272101.pdf?arnumber=5272101

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of the Substrate Material on the RF Performance of Carbon-Nanotube Transistors;IEEE Transactions on Nanotechnology;2014-01

2. Stability Analysis in CNTFETs;IEEE Electron Device Letters;2013-02

3. Impact of Effective Mass on the Scaling Behavior of the $f_{T}$ and $f_{\bf max}$ of III–V High-Electron-Mobility Transistors;IEEE Transactions on Nanotechnology;2012-11

4. High-Frequency Ballistic Transport Phenomena in Schottky Barrier CNTFETs;IEEE Transactions on Electron Devices;2012-10

5. RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part II: Extrinsic Results;IEEE Transactions on Electron Devices;2011-07

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