Resistive Switching Memory Architecture Based on Polarity Controllable Selectors-Reference-Cited by-同舟云学术

Resistive Switching Memory Architecture Based on Polarity Controllable Selectors

Published:2019 Issue: Volume:18 Page:183-194
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Levisse Alexandre^ORCID,Gaillardon Pierre-Emmanuel^ORCID,Giraud Bastien,O'Connor Ian^ORCID,Noel Jean-Philippe,Moreau Mathieu^ORCID,Portal Jean-Michel^ORCID

Funder

ERC Consolidator Grant COMPUSAPIEN

European project ECSEL-PANACHE

United States-Israel Binational Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/8599030/08585408.pdf?arnumber=8585408

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