Effects of Annealing and p-Doping on the Two-State Competition in 1.3 μm InAs/GaAs Quantum-Dot Lasers-Reference-Cited by-同舟云学术

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Effects of Annealing and p-Doping on the Two-State Competition in 1.3 μm InAs/GaAs Quantum-Dot Lasers

Published:2011-11 Issue:6 Volume:10 Page:1211-1213
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Zhao H. X.,Yoon S. F.,Ngo C. Y.,Wang R.,Cao Q.,Liu C. Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/6069913/05724306.pdf?arnumber=5724306

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Dot Materials Toward High-Speed and Ultrafast Laser Applications;Quantum Dot Optoelectronic Devices;2020

2. Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes;ACS Photonics;2017-12-08

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