Power Semiconductor Devices-Development Trends and System Interactions
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4239117/4239118/04239181.pdf?arnumber=4239181
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Novel 4H–SiC/Si Heterojunction IGBT Achieving Low Turn–Off Loss;Electronics;2023-06-01
2. Impact of Jfet Width on Conduction Characteristics for P-Channel Sic Igbt;2023
3. Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET;Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering;2021-10-22
4. Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode;Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer Engineering;2020-11-06
5. Minimization of Passive Components in Multi-level Flying Capacitor DC-DC Converter;IEEJ Journal of Industry Applications;2016
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