Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET-Reference-Cited by-同舟云学术

Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET

Published:2021-10-22 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering
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Author:

Lei Yingying¹,Wu Yu¹,Zhou Xintian¹,Liu Meng¹,Li Xinyu¹,Fang Xingyu¹,Zhao Kai¹,Zhong Zheng¹

Affiliation:

1. Beijing University of Technology, Beijing, China

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3501409.3501422

Reference15 articles.

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5. Dahlquist F , Svedberg J O , Zetterling C M , , Forward Drop JBS Diode with Low Leakage[J]. Mater Sci Forum , 2000 . Dahlquist F, Svedberg J O, Zetterling C M, et al. A 2.8kV, Forward Drop JBS Diode with Low Leakage[J]. Mater Sci Forum, 2000.