Multi-Die to Wafer Bonding Through Plasma-Activated Cu-Cu Direct Bonding in Ambient Conditions
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Nanyang Technological University,Singapore,Singapore
Funder
Agency for Science, Technology and Research (A*STAR)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9687597/9687598/09687609.pdf?arnumber=9687609
Reference23 articles.
1. Two-Step Plasma Treatment on Copper Surface for Low-Temperature Cu Thermo-Compression Bonding
2. Cu–Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol
3. Direct copper-copper wafer bonding with Ar/N2 plasma activation;chua;Int Electron Devices and Solid-State Circuits Conf,2015
4. Cu-Cu Die to Die Surface Activated Bonding in Atmospheric Environment Using Ar and Ar/N2 Plasma
5. Cu–Cu Bonding in Ambient Environment by Ar/N2 Plasma Surface Activation and Its Characterization
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