Analysis of HfO<sub>2</sub> and ZrO<sub>2</sub> as High-K Dielectric for CMOS Nano Devices-Reference-Cited by-同舟云学术

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Analysis of HfO₂ and ZrO₂ as High-K Dielectric for CMOS Nano Devices

Published:2022-03-29 Issue: Volume: Page:
ISSN:
Container-title:2022 9th International Conference on Electrical and Electronics Engineering (ICEEE)
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Author:

Hasan Talal¹,Zafar Salahuddin²,Ozbay Ekmel²,Kashif Ahsan Ullah³

Affiliation:

1. IIUI,Centre for Advanced Electronics & Photovoltaic Engineering (CAEPE),Islamabad,Pakistan

2. Bilkent University,Nanotechnology Research Center (NANOTAM),Department of Electrical and Electronics Engineering,Ankara,Turkey,06800

3. IIUI,Centre for Advanced Electronics & Photovoltaic Engineering (CAEPE),Department of Electrical Engineering,Islamabad,Pakistan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9772478/9772516/09772574.pdf?arnumber=9772574

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Glancing angle fabricated Au/ZrO2 nanoparticles based device for non‑volatile capacitive memory application;Journal of Materials Science: Materials in Electronics;2024-05

2. Impacts of Floating Poly on Electrostatic Discharge Protection of Power-Managed High-Voltage Laterally Diffused Metal Oxide Semiconductor Components;Electronics;2023-06-25

3. ESD-capability Impacts of the RESURF NBL Length in High-voltage nLDMOSs;2023 9th International Conference on Applied System Innovation (ICASI);2023-04-21

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