Carrier lifetime evaluation in FD-SOI layers
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8059714/8066575/08066611.pdf?arnumber=8066611
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. SOI pMOS drain leakage understanding based on TCAD and measurements;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
2. Doped Channel SOI pMOS TCAD Description Including Floating Body Effects;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
3. Micro-features of ambipolar snapback behaviour under high current injection to design capacitorless memory device;Physica Scripta;2021-12-01
4. SEU Prediction for Very Integrated Circuits based on Advanced Physical Considerations;2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2019-09
5. Carrier Lifetime Measurement in Ultrathin FD-SOI Using Virtual Diodes;IEEE Transactions on Electron Devices;2019-04
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