180 GHz f/sub T/ and f/sub max/ self-aligned SiGeC HBT using selective epitaxial growth of the base-Reference-Cited by-同舟云学术

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180 GHz f/sub T/ and f/sub max/ self-aligned SiGeC HBT using selective epitaxial growth of the base

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Container-title:Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710)
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Author:

Chevalier P.,Fellous C.,Martinet B.,Leverd F.,Saguin F.,Dutartre D.,Chantre A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8890/28111/01256873.pdf?arnumber=1256873

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications;IEEE Journal of Solid-State Circuits;2005-10

2. Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors;Microelectronics Reliability;2005-09

3. Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base;IEEE Electron Device Letters;2005-04

4. Reduction of Boron Diffusion in Silicon–Germanium by Fluorine Implantation;IEEE Electron Device Letters;2004-08

5. 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology;Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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