230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology-Reference-Cited by-同舟云学术

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230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

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Container-title:Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
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Author:

Chevalier P.,Fellous C.,Rubaldo L.,Dutartre D.,Laurens M.,Jagueneau T.,Leverd F.,Bord S.,Richard C.,Lenoble D.,Bonnouvrier J.,Marty M.,Perrotin A.,Gloria D.,Saguin F.,Barbalat B.,Beerkens R.,Zerounian N.,AnieI F.,Chantre A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9427/29913/01365786.pdf?arnumber=1365786

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. f T × BV cbo product modeling for SiGe:C HBTs;Semiconductors;2009-12

2. SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion;2008 26th International Conference on Microelectronics;2008-05

3. Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS;IEEE Journal of Solid-State Circuits;2007-10

4. Development of a self-aligned pnp HBT for a complementary thin-SOI SiGeC BiCMOS technology;2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting;2007-09

5. 1.8 dB insertion loss 200 GHz CPW band pass filter integrated in HR SOI CMOS Technology;2007 IEEE/MTT-S International Microwave Symposium;2007-06

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