SiC power devices: From conception to social impact-Reference-Cited by-同舟云学术

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SiC power devices: From conception to social impact

Published:2016-09 Issue: Volume: Page:
ISSN:
Container-title:2016 46th European Solid-State Device Research Conference (ESSDERC)
language:
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Author:

Baliga B. Jayant

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7584557/7598672/07599619.pdf?arnumber=7599619

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs;Key Engineering Materials;2023-05-19

2. A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance;Micromachines;2023-05-17

3. Design and optimization of cell and field limiting ring termination for 1200 V 4H-SiC Junction Barrier Schottky (JBS) Diodes;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10

4. Design, Fabrication and Characterization of 6.5kV/100A 4H-SiC PiN power rectifier;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25

5. Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers;Materials Science Forum;2019-05

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