SiC power devices: From conception to social impact
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7584557/7598672/07599619.pdf?arnumber=7599619
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design and optimization of cell and multiple-zone gradient modulation field limiting ring(MGM-FLR) termination for 1700V/10A 4H-SiC merged PiN/Schottky (MPS) Diodes;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08
2. Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs;Key Engineering Materials;2023-05-19
3. A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance;Micromachines;2023-05-17
4. Design and optimization of cell and field limiting ring termination for 1200 V 4H-SiC Junction Barrier Schottky (JBS) Diodes;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10
5. Design, Fabrication and Characterization of 6.5kV/100A 4H-SiC PiN power rectifier;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25
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