Management of parasitic bipolars in modular high power LDMOS technology

Author:

Agam Moshe,Pjencak Jaroslav,Prejda Dusan,Suwhanov Agajan,Yao Thierry,Seliga Ladislav

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Design of SEE-Tolerant analog switch chip with a novel diode structure *;Nanotechnology;2024-08-12

2. Global Potential Control Technique Used in Isolation Structure for 1200V HVICs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Novel ESD characterization method for bipolar devices using a combined TLP system with dynamic base bias;2023 45th Annual EOS/ESD Symposium (EOS/ESD);2023-10-02

4. Physical and Electrical Characterization of Deep Trench Isolation in Bulk Silicon and SOI Substrates;2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2021-05-10

5. The Floating NBL Architecture: Enabler of a Quasi-SOI process;2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD);2020-09

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