Grain boundary-driven leakage path formation in HfO<inf>2</inf> dielectrics-Reference-Cited by-同舟云学术

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Grain boundary-driven leakage path formation in HfO2 dielectrics

Published:2010-09 Issue: Volume: Page:
ISSN:
Container-title:2010 Proceedings of the European Solid State Device Research Conference
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Author:

Bersuker G.,Yum J.,Iglesias V.,Porti M.,Nafria M.,McKenna K.,Shluger A.,Kirsch P.,Jammy R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5609035/5617713/05618225.pdf?arnumber=5618225

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling the Formation of Conductive Pathways in Memristive Devices;Advanced Science;2022-09-08

2. Analysis of the reset transition in bipolar HfO₂-based ReRAM to improve modeling accuracy;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

3. Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techniques;Noise in Nanoscale Semiconductor Devices;2020

4. Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device;Nanomaterials;2019-02-19

5. Effect of nitrogen passivation/pre nitration on interface properties of atomic layer deposited HfO2;Journal of Materials Science: Materials in Electronics;2018-02-20

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