High Quality Ultrathin La2O3 Films for High-k Gate Insulator-Reference-Cited by-同舟云学术

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High Quality Ultrathin La2O3 Films for High-k Gate Insulator

Published:2001 Issue: Volume: Page:
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Container-title:31st European Solid-State Device Research Conference
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Author:

Ohmi S.-i.,Kobayashi C.,Aizawa K.,Yamamoto S.,Tokumitsu E.,Ishiwara H.,Iwai H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10066/32281/01506626.pdf?arnumber=1506626

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced physical and electrical properties of HfO2 deposited by atomic layer deposition using a novel precursor with improved thermal stability;Surfaces and Interfaces;2023-11

2. Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations;Computational Materials Science;2019-11

3. Lanthanide rare earth oxide thin film as an alternative gate oxide;Materials Science in Semiconductor Processing;2017-09

4. Samarium Oxide and Samarium Oxynitride Thin Film as Alternative Gate Oxide on Silicon Substrate;Reference Module in Materials Science and Materials Engineering;2017

5. Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate;Journal of Materials Science: Materials in Electronics;2016-11-22

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