p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current-Reference-Cited by-同舟云学术

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p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

Published:2013-02 Issue:2 Volume:34 Page:202-204
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hwang Injun,Kim Jongseob,Choi Hyuk Soon,Choi Hyoji,Lee Jaewon,Kim Kyung Yeon,Park Jong-Bong,Lee Jae Cheol,Ha Jongbong,Oh Jaejoon,Shin Jaikwang,Chung U-In

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6417986/06403500.pdf?arnumber=6403500

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