High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications-Reference-Cited by-同舟云学术

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High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

Published:2012-10 Issue:10 Volume:33 Page:1345-1347
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Dong Shurong,Wu Jian,Miao Meng,Zeng Jie,Han Yan,Liou Juin J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6310089/06286984.pdf?arnumber=6286984

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on MOS shunt LVTSCR for ESD application;Solid-State Electronics;2024-08

2. Design of a LVTSCR triggered SCR device for low voltage ESD protection;Microelectronics Journal;2024-07

3. Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCR;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Enhancement of holding voltage by a modified low-voltage trigger silicon-controlled rectifier structure for electrostatic discharge protection;Chinese Physics B;2023-01-01

5. Investigation on holding voltage of asymmetric DDSCR with floating heavy doping in 0.18 μm CMOS process;Solid-State Electronics;2023-01

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