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Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors

  • Published:2012-10 Issue:10 Volume:33 Page:1348-1350
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Lee Sang-Hyun,Baek Chang-Ki,Park Sooyoung,Kim Dong-Won,Sohn Dong Kyun,Lee Jeong-Soo,Kim Dae M.,Jeong Yoon-Ha

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluoride ion and hydrofluoric acid detection via silicon nanosheet field-effect transistor sensor;Sensors and Actuators B: Chemical;2023-10

2. Electrical Noise Behaviour of High-k Gate-All-Around MOSFET Based on Two-Port Device Network Analysis;2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE);2022-10-18

3. Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs;Solid-State Electronics;2021-10

4. Surround Gate Transistor With Epitaxially Grown Si Pillar and Simulation Study on Soft Error and Rowhammer Tolerance for DRAM;IEEE Transactions on Electron Devices;2021-02

5. Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective?;2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2020-09-01
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