480-GHz $f_{\max}$ in InP/GaAsSb/InP DHBT With New Base Isolation $\mu$-Airbridge Design-Reference-Cited by-同舟云学术

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480-GHz $f_{\max}$ in InP/GaAsSb/InP DHBT With New Base Isolation $\mu$-Airbridge Design

Published:2012-10 Issue:10 Volume:33 Page:1381-1383
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zaknoune M.,Mairiaux E.,Roelens Y.,Waldhoff N.,Rouchy U.,Frijlink P.,Rocchi M.,Maher H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6310089/06291746.pdf?arnumber=6291746

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz;IEEE Transactions on Electron Devices;2020-12

2. Molecular Beam Epitaxy for Steep Switching Tunnel FETs;Molecular Beam Epitaxy;2019-02-08

3. Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices;High Mobility Materials for CMOS Applications;2018

4. A review of InP/InAlAs/InGaAs based transistors for high frequency applications;Superlattices and Microstructures;2015-10

5. InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate;IEEE Electron Device Letters;2014-10

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