Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs-Reference-Cited by-同舟云学术

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Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs

Published:2024-04-15 Issue: Volume:65 Page:1-4
ISSN:
Container-title:2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)
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Author:

Bremer Johan¹,Rorsman Niklas¹,Thorsell Mattias¹

Affiliation:

1. Chalmers University of Technology,Microwave Electronics Laboratory,Gothenburg,Sweden,MC2, 412 96

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10520250/10520251/10520686.pdf?arnumber=10520686

Reference11 articles.

1. An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

2. Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

3. Anomalous Kink Effect in GaN High Electron Mobility Transistors

4. "Kink;Singh;AlGaN/GaN-HEMTs: Floating Buffer Model," IEEE Transactions on Electron Devices,2018

5. A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

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