Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor-Reference-Cited by-同舟云学术

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Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor

Published:2024-07-15 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 37th International Vacuum Nanoelectronics Conference (IVNC)
language:
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Author:

Soud Ammar Al¹,Jaber Ahmad M D Assa'd²,Holcman Vladimir³,Sedlak Petr³,Sobola Dinara¹

Affiliation:

1. Central European Institute of Technology, Brno University of Technology,Brno,Czech Republic,61200

2. Aqaba Medical Sciences University,Faculty of Medicine,Department of Basic Medical Sciences,Aqaba,12 Jordan

3. Brno University of Technology,Faculty of Electrical Engineering and Communication,Department of Physics,Brno,Czech Republic,61600

Funder

Czech Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10649892/10652259/10652423.pdf?arnumber=10652423

Reference6 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Intrinsic and extrinsic performance limits of graphene devices on SiO2

3. Contact resistance and mobility in back-gate graphene transistors

4. Simulation of the Band Structure of Graphene and Carbon Nanotube

5. GFET Asymmetric Transfer Response Analysis through Access Region Resistances

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