Trench storage node technology for gigabit DRAM generations-Reference-Cited by-同舟云学术

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Trench storage node technology for gigabit DRAM generations

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Container-title:International Electron Devices Meeting. Technical Digest
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Author:

Muller K.P.,Flietner B.,Hwang C.L.,Kleinhenz R.L.,Nakao T.,Ranade R.,Tsunashima Y.,Mii T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4251/12029/00553853.pdf?arnumber=553853

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel solution to improve static and dynamic retention characteristics by enhancing hydrogen passivation with in situ LD-TEOS/TEOS dual layer;Japanese Journal of Applied Physics;2024-03-01

2. A Unique Approach to Generate Self-Aligned T-Gate Transistors in Counter-Doped Poly-Si With High Etching Selectivity and Isotropy;IEEE Electron Device Letters;2020-03

3. What Your DRAM Power Models Are Not Telling You;Proceedings of the ACM on Measurement and Analysis of Computing Systems;2018-12-21

4. Design and fabrication of a high-density multilayer metal–insulator–metal capacitor based on selective etching;Journal of Micromechanics and Microengineering;2013-02-06

5. A process for SOI resonators with surface micromachined covers and reduced electrostatic gaps;Journal of Micromechanics and Microengineering;2010-03-05

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