Author:
Liu W.,Jin X.,King Y.,Hu C.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
28 articles.
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1. Channel current and real device effects;Finfet/gaa Modeling for IC Simulation and Design;2024
2. BSIM-BULK Charge and Capacitance Model;BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-voltage;2023
3. Compact Models and the Road Leading to BSIM-BULK;BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-voltage;2023
4. Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures;Nanomaterials;2022-12-06
5. A Subcircuit-Based Model for the Accumulation-Mode MOS Capacitor;Journal of Circuits, Systems and Computers;2022-09-24