A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection
Author:
Affiliation:
1. Institute of VLSI Design, Zhejiang University, Hangzhou, China
2. Technology Department, Pantum Electronics Company Ltd., Zhuhai, China
Funder
China National Key Research and Development Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/66/10521908/10496911.pdf?arnumber=10496911
Reference21 articles.
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