InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with f<sub>MAX</sub> = 1.2 THz-Reference-Cited by-同舟云学术

InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with f_MAX = 1.2 THz

Published:2021-12-11 Issue: Volume: Page:
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Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Arabhavi A.M.¹,Ciabattini F.¹,Hamzeloui S.¹,Fluckiger R.¹,Popovic T.¹,Han D.¹,Marti D.¹,Bonomo G.¹,Chaudhary R.¹,Ostinelli O.¹,Bolognesi C.R.¹

Affiliation:

1. Millimeter-Wave Electronics Group, ETH-Zurich,Zurich,Switzerland,CH 8092

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720644.pdf?arnumber=9720644

Reference10 articles.

1. Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate

2. InP/GaAsSb DHBTs for THz applications and improved extraction of their cutoff frequencies

3. An analytic expression of f/sub max/ for HBTs

4. Non-Linearity Characterization of Submicron Type-I InP/InGaAs/InP and Type-I/II AIInP/GaAsSb/InP DHBTs;xu;Proc 2012 Compound Manufacturing Tech Conf (CS MANTECH),2012

5. InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz

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