Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device-Reference-Cited by-同舟云学术

Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device

Published:2021-12-11 Issue: Volume: Page:
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Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Vaz Diogo C.¹,Lin Chia-Ching²,Plombon John²,Choi Won Young¹,Groen Inge¹,Arango Isabel¹,Pham Van Tuong¹,Nikonov Dmitri E.²,Li Hai²,Debashis Punyashloka²,Clendenning Scott B.²,Gosavi Tanay A.²,Garcia Vincent³,Fusil Stephane³,Bibes Manuel³,Huang Yen-Lin⁴,Prasad Bhagwati⁴,Ramesh Ramamoorthy⁴,Casanova Felix¹,Young Ian A.²

Affiliation:

1. CIC nanoGUNE,Donostia-San Sebastián,Basque Country,Spain,20018

2. Components Research, Intel Corporation,Hillsboro,OR,USA

3. CNRS/Thales, Université Paris-Saclay,Unité Mixte de Physique,Palaiseau,France,91767

4. University of Califomia,Department of Materials Science and Engineering and Department of Physics,Berkeley,CA,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720677.pdf?arnumber=9720677

Reference10 articles.

1. Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

2. Deterministic switching of ferromagnetism at room temperature using an electric field

3. Experimental observation of coupled valley and spin Hall effect in p‐doped WSe 2 devices

4. Ultralow Voltage Manipulation of Ferromagnetism

5. Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system

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