Reliability Characterization for Advanced DRAM using HK/MG + EUV Process Technology-Reference-Cited by-同舟云学术

Reliability Characterization for Advanced DRAM using HK/MG + EUV Process Technology

Published:2021-12-11 Issue: Volume: Page:
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Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Lee S.¹,Kim G.-J.¹,Lee N-H.¹,Lee KW.¹,Woo BW.¹,Jin J.¹,Kim JG.¹,Lee YS.¹,Kim HS.¹,Pae S.¹

Affiliation:

1. Memory Division, Samsung Electronics,Hwasung,Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720613.pdf?arnumber=9720613

Reference4 articles.

1. The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress;gang-jun;2021 IEEE International Reliability Physics Symposium (IRPS),0

2. An innovative indicator to evaluate DRAM cell transistor leakage current distribution;min hee;IEEE Journal of the Electron Devices Society,2017

3. Reliability screening of high-k dielectrics based on voltage ramp stress;andreas;Microelectronics Reliability,2007

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