Toward High Performance 4H-SiC MOSFETs Using Low Temperature Annealing Process with Supercritical Fluid-Reference-Cited by-同舟云学术

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Toward High Performance 4H-SiC MOSFETs Using Low Temperature Annealing Process with Supercritical Fluid

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Wang Menghua¹,Yang Mingchao¹,Liu Weihua¹,Yang Songquan¹,Han Chuanyu¹,Geng Li¹,Hao Yue²

Affiliation:

1. School of Microelectronics, Xi'an Jiaotong University,Xi'an,P.R. China,710049

2. School of Microelectronics, Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Xi'an,P.R. China,710071

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720636.pdf?arnumber=9720636

Reference12 articles.

1. Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

2. Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2/ Al2O3Gate Stack

3. Nitrogen and Hydrogen Induced Trap Passivation at the SiO₂/4H-SiC Interface

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology;IEEE Electron Device Letters;2023-05

2. SiC and GaN Power Devices;More-than-Moore Devices and Integration for Semiconductors;2023

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