Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal-Reference-Cited by-同舟云学术

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Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

Published:2016-07 Issue:7 Volume:63 Page:2826-2830
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Xiangyu^ORCID,Lee Bongmook,Misra Veena

Funder

Toyota Motor Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7494744/07480445.pdf?arnumber=7480445

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs;Solid State Phenomena;2024-08-22

2. High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2;Solid State Phenomena;2024-08-22

3. Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO₂/SiO₂ interface engineering;Journal of Physics D: Applied Physics;2024-06-24

4. A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance;2024 IEEE 2nd International Conference on Power Science and Technology (ICPST);2024-05-09

5. Lowering of interface state density between deposited gate oxide and SiC substrate via controlling substrate oxidation;Vacuum;2024-04

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