A 20Mb Embedded STT-MRAM Array Achieving 72% Write Energy Reduction with Self-termination Write Schemes in 16nm FinFET Logic Process-Reference-Cited by-同舟云学术

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A 20Mb Embedded STT-MRAM Array Achieving 72% Write Energy Reduction with Self-termination Write Schemes in 16nm FinFET Logic Process

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Ito T.¹,Saito T.¹,Taito Y.¹,Sonoda K.¹,Watanabe G.¹,Matsubara K.¹,Kanda A.¹,Shimoi T.¹,Takeda K.¹,Kono T.¹

Affiliation:

1. Renesas Electronics Corporation,Tokyo,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720523.pdf?arnumber=9720523

Reference5 articles.

1. Self-Terminated Write-Assist Technique for STT-RAM

2. Write Termination Circuits for RRAM: A Holistic Approach From Technology to Application Considerations

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18

2. The influence of interface effects on the switching behavior in ultra-scaled MRAM cells;Solid-State Electronics;2023-03

3. In-Memory Computing for Machine Learning and Deep Learning;IEEE Journal of the Electron Devices Society;2023

4. Interface effects in ultra-scaled MRAM cells;Solid-State Electronics;2022-08

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