Interface effects in ultra-scaled MRAM cells

Author:

Bendra M.,Fiorentini S.,Goes W.,Selberherr S.,Sverdlov V.

Funder

Christian Doppler Forschungsgesellschaft

Bundesministerium für Digitalisierung und Wirtschaftsstandort

Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung

Technische Universität Wien Bibliothek

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. A 20Mb Embedded STT-MRAM Array Achieving 72% Write Energy Reduction with Self-termination Write Schemes in 16nm FinFET Logic Process;Ito,2021

2. Chiu Y-C, Yang C-S, Teng S-H, Huang H-Y, Chang F-C, et al. A 22nm 4Mb STT-MRAM Data-Encrypted Near-Memory Computation Macro with a 192GB/s Read-and-Decryption Bandwidth and 25.1-55.1TOPS/W 8b MAC for AI Operations, in: 2022 IEEE International Solid- State Circuits Conference (ISSCC), vol. 65; 2022. p. 178–180. https://doi.org/10.1109/ISSCC42614.2022.9731621.

3. Commercialization of 1Gb Standalone Spin-Transfer Torque MRAM;Sun;IEEE International Memory Workshop (IMW),2021

4. Magnetoresistive Random Access Memory: Present and Future;Ikegawa;IEEE Trans Electron Devices,2020

5. High-Performance Shape-Anisotropy Magnetic Tunnel Junctions down to 2.3 nm;Jinnai,2020

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Comprehensive Modeling of Advanced Composite Magnetoresistive Devices;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

2. Multi-level Operation in Ultra-scaled MRAM;2023 IEEE Latin American Electron Devices Conference (LAEDC);2023-07-03

3. Design Analysis of Ultra-Scaled MRAM Cells;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

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