BioFET Technology: Aggressively Scaled pMOS FinFET as Biosensor-Reference-Cited by-同舟云学术

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BioFET Technology: Aggressively Scaled pMOS FinFET as Biosensor

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Martens K.,Vos R.,Stakenborg T.,Lagae L.,Heyns M.,Severi S.,Roy W. Van,Santermans S.,Gupta M.,Hellings G.,Wuytens R.,Du Bois B.,Dupuy E.,Altamirano-Sanchez E.,Jans K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993589.pdf?arnumber=8993589

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing;Semiconductor Science and Technology;2024-08-22

2. Sensitivity assessment of dielectric modulated GaN material based SOI-FinFET for label-free biosensing applications;International Journal of Materials Research;2023-03-30

3. Design of Sub-40nm FinFET Based Label Free Biosensor;Silicon;2022-05-24

4. Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors;Science Advances;2021-12-03

5. Sensitivity Analysis of a Novel Negative Capacitance FinFET for Label-Free Biosensing;IEEE Transactions on Electron Devices;2021-10

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