Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions-Reference-Cited by-同舟云学术

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Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions

Published:2024-04-14 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Ravikumar Priyankka Gundlapudi¹,Ravindran Prasanna Venkatesan¹,Aabrar Khandker Akif¹,Song Taeyoung¹,Kirtania Sharadindu Gopal¹,Das Dipjyoti¹,Park Chinsung¹,Afroze Nashrah¹,Tian Mengkun²,Yu Shimeng¹,Islam Ahmad Ehtesham³,Datta Suman¹,Mahapatra Souvik⁴,Khan Asif¹

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology,GA,USA

2. Institute of Materials,GA,USA

3. Sensors directorate, Air Force Research Laboratory (AFRL),OH,USA

4. Indian Institute of Technology,Department of Electrical Engineering,Mumbai,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529414.pdf?arnumber=10529414

Reference12 articles.

1. NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads

2. Physics of soft-breakdown and its implications for integrated circuits;Alam;IEEE IRPS Tutorial,2003

3. Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics

4. Hot atom damage (HAD) limited TDDB lifetime of ferroelectric memories

5. Observation and Control of Hot Atom Damage in Ferroelectric Devices

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