NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads-Reference-Cited by-同舟云学术

NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads

Published:2023-12-09 Issue: Volume: Page:
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Ramaswamy N.¹,Calderoni A.¹,Zahurak J.¹,Servalli G.¹,Chavan A.¹,Chhajed S.¹,Balakrishnan M.¹,Fischer M.¹,Hollander M.¹,Ettisserry D. P.¹,Liao A.¹,Karda K.¹,Jerry M.¹,Mariani M.¹,Visconti A.¹,Cook B. R.¹,Cook B. D.¹,Mills D.¹,Torsi A.¹,Mouli C.¹,Byers E.¹,Helm M.¹,Pawlowski S.¹,Shiratake S.¹,Chandrasekaran N.¹

Affiliation:

1. Micron Technology Inc.,Boise,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413848.pdf?arnumber=10413848

Reference7 articles.

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