A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures-Reference-Cited by-同舟云学术

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A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
language:
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Author:

Tan T. L.¹,Eng C. W.¹,Xu H.¹,Soon J. M.¹,Ebard E.²,Siddabathula M.²,Phoong B. F.³,Poh K. H.³,Prabhu M.⁴,Zhao X. -L.⁵,Koo J. M.⁵,Cho K.⁵,Zhang G.-W.⁵

Affiliation:

1. Quality & Reliability, GlobalFoundries,Singapore

2. Quality & Reliability, GlobalFoundries,Dresden,Germany

3. GlobalFoundries,Design Enablement,Singapore

4. GlobalFoundries,Design Enablement,Malta,N.Y,United States

5. GlobalFoundries,Technology Development,Singapore

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764564.pdf?arnumber=9764564

Reference8 articles.

1. Plasma-Charging Damage of Floating MIM Capacitors

2. Thin gate oxide damage due to plasma processing

3. A CDM-like damage mechanism for multiple power domains fabricated with Deep N-well processes

4. Circuit relevant well charging from metal antenna and its degradation on digital MOS transistor reliability

5. A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Layout Guidelines against Charging Damage from the Well-Side Antennas in Separated Power Domains;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation;IEEE Transactions on Device and Materials Reliability;2023-09

3. Protection Schemes for Plasma Induced Damage from Well-Side Antennas;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

4. Plasma induced charging damage (PID) from well charging in a BCD technology with deep trenches causing MOS device reliability lifetime degradation;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09

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