Cleaved-Gate Ferroelectric FET for Reliable Multi-Level Cell Storage-Reference-Cited by-同舟云学术

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Cleaved-Gate Ferroelectric FET for Reliable Multi-Level Cell Storage

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Bagga Navjeet¹,Ni Kai²,Chauhan Nitanshu³,Prakash Om⁴,Hu X. Sharon⁵,Amrouch Hussam⁶

Affiliation:

1. PDPM-IIITDM,Department of Electronics and Communication Engineering,Jabalpur,India

2. Microsystems Engineering Rochester Institute of Technology,NY,USA

3. NIT-Uttarakhand,Department of Electronics Engineering,India

4. Karlsruhe Institute of Technology,Germany

5. University of Notre Dame,USA

6. University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764553.pdf?arnumber=9764553

Reference20 articles.

1. Impact of Extrinsic Variation Sources on the Device-to-Device Variation in Ferroelectric FET

2. Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

3. Understanding the memory window in 1T-FeFET memories: a depolarization field perspective

4. Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer

5. Partial switching of ferroelectrics for synaptic weight storage

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. BEOL-Compatible MFMIS Ferroelectric/ Anti-ferroelectric FETs—Part II: Mechanism With Load Line Analysis and Scaling Strategy;IEEE Transactions on Electron Devices;2024-09

2. Multi-level storage in cleaved-gate ferroelectric FETs investigated by 3D phase-field-based quantum transport simulation;Solid-State Electronics;2024-06

3. Unique Consecutive RTN Characteristics Coupled With Ferroelectric Nanodomain Switching in Advanced Fe-FinFETs;IEEE Electron Device Letters;2024-04

4. Analytical Model of Dual Cavity Nanowire Tunnel FET-based Dielectric Modulated Biosensor;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

5. Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants;Solid-State Electronics;2023-01

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