Failure Analysis of AlGaN/GaN Power HEMTs through an innovative sample preparation approach
Author:
Affiliation:
1. STMicroelectronics,Catania,Italy,95121
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764513.pdf?arnumber=9764513
Reference5 articles.
1. Single image spectral electroluminescence (photon emission) of GaN HEMTs
2. Research on failure analysis and method of GaN-based HEMTs
3. Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage;nakao;2002 Jpn J Appl Phys,1990
4. Reliability evaluation and failure analysis of AlGaN/GaN high electron mobility transistor by photo emission microscope
5. Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress;Journal of Failure Analysis and Prevention;2024-09-13
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