Effect of Non-identical Annealing on the Breakdown Characteristics of Sputtered IGZO Films
Author:
Affiliation:
1. Indian Institute of Technology (IIT) Roorkee,Department of Electronics & Communication Engineering,Roorkee,Uttarakhand,India,247 667
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764429.pdf?arnumber=9764429
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1. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
2. Sub-Pico-Second Hole Generation Lifetime in Thin Film IGZO Sputtered and Annealed on P-Silicon Substrate
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4. Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors;kim;IEEE Trans on Electron Devices,2010
5. Trends in the ultimate breakdown strength of high dielectric-constant materials
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