An Analytical Model of Transient Response of MEMS under High-G shock for Reliability Assessment
Author:
Affiliation:
1. Tsinghua University,Department of Precision Instrument,Beijing,China,100084
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764430.pdf?arnumber=9764430
Reference16 articles.
1. Vibration and shock reliability of MEMS: modeling and experimental validation
2. A Transfer Function Approach to Shock Duration Compensation for Laboratory Evaluation of Ultra-High-G Vacuum-Packaged MEMS Accelerometers
3. A Clarification of the Shock/Vibration Equivalence in MIL-STD-810D/E;caruso;Journal of the Environmental Sciences,1989
4. New Electronic Packaging Method for Potted Guidance Electronics to Sustain Temperature Cycling and Survive High-G Applications
5. A General Methodology to Predict the Reliability of Single-Crystal Silicon MEMS Devices
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1. Reliability of MEMS inertial devices in mechanical and thermal environments: A review;Heliyon;2024-03
2. Mechanical Response of MEMS Suspended Inductors under Shock Using the Transfer Matrix Method;Micromachines;2023-06-01
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