Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance-Reference-Cited by-同舟云学术

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Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Pirro L.¹,Liebscher P.¹,Brantz C.¹,Kessler M.¹,Herzog H.¹,Zimmerhackl O.¹,Jain R.¹,Ebrand E.¹,Gebauer K.¹,Otto M.¹,Zaka A.¹,Hoentschel J.¹

Affiliation:

1. Global Foundries Fab 1 LLC & Co.KG,Dresden,Saxony,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764532.pdf?arnumber=9764532

Reference8 articles.

1. Area-Efficient and Bias-Flexible Inline Monitoring Structure for Fast Characterization of RTN and Transistor Local Mismatch in Advanced Technologies

2. Random Device Physics;zhang;from Channel Percolation Perspectives Statistical Simulations Key Factors and Experimental Results IEDM,2016

3. Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies

4. Shallow trench isolation for advanced ULSI CMOS technologies

5. Critical MOSFETs operation for low voltage/low power IC's: Ideal characteristics, parameter extraction, electrical noise and RTS fluctuations

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient Characterization Methodology for Low-Frequency Noise Monitoring;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15

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