New RC-Imbalance Failure Mechanism of Well Charging Damage and The Implemented Rule-Reference-Cited by-同舟云学术

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New RC-Imbalance Failure Mechanism of Well Charging Damage and The Implemented Rule

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Chu Yu-Lin¹,Kuo Hsi-Yu¹,Dai Hung-Da²,Chen Kuan-Hung²,Lin Pei-Jung²,Liao Chun-Ting²,Lin Ta-Chun²,Feng Ming³,Chiu Swercy²,Liang Victor²

Affiliation:

1. Taiwan Semiconductor Manufacturing Co., Ltd,Quality & Reliability,Hsinchu,Taiwan, R. O. C,300-77

2. Taiwan Semiconductor Manufacturing Co., Ltd,Product Engineering,Hsinchu,Taiwan, R. O. C,300-77

3. Taiwan Semiconductor Manufacturing Co., Ltd,DRC,Hsinchu,Taiwan, R. O. C

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764488.pdf?arnumber=9764488

Reference7 articles.

1. A CDM-like damage mechanism for multiple power domains fabricated with Deep N-well processes

2. Circuit relevant well charging from metal antenna and its degradation on digital MOS transistor reliability

3. Modeling of oxide breakdown from gate charging during resist ashing

4. A new mechanism of signal path charging damage across separated power domain deep N-Well interface

5. A New Simulation Model for Plasma Ashing Process-Induced Oxide Degradation in MOSFET;you;IEEE Trans Devices,1998

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Layout Guidelines against Charging Damage from the Well-Side Antennas in Separated Power Domains;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation;IEEE Transactions on Device and Materials Reliability;2023-09

3. Protection Schemes for Plasma Induced Damage from Well-Side Antennas;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

4. Plasma induced charging damage (PID) from well charging in a BCD technology with deep trenches causing MOS device reliability lifetime degradation;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09

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