On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors-Reference-Cited by-同舟云学术

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Tyaginov Stanislav¹,Afzalian Aryan¹,Makarov Alexander¹,Grill Alexander¹,Vandemaele Michiel²,Cherenev Maksim³,Vexler Mikhail³,Hellings Geert¹,Kaczer Ben¹

Affiliation:

1. imec,Leuven,Belgium,3001

2. MICAS,KU Leuven,Department of Electrical Engineering (ESAT),Leuven,Belgium,3000

3. A.F. Ioffe Physical-Technical Institute,Russian Academy of Sciences,Saint-Petersburg,Russia,194021

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764568.pdf?arnumber=9764568

Reference52 articles.

1. Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

2. Towards understanding recovery of hot-carrier induced degradation

3. A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation

4. Adaptive variable-order spherical harmonics expansion of the Boltzmann Transport Equation

5. On the feasibility of spherical harmonics expansions of the Boltzmann transport equation for three-dimensional device geometries

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