A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters-Reference-Cited by-同舟云学术

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A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

Published:2014-05 Issue:5 Volume:29 Page:2338-2344
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Risaletto Damien,Bergogne Dominique,Dubois Fabien,Morel Herve,Allard Bruno,Meuret Regis

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/6709815/06600900.pdf?arnumber=6600900

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrafast Self-Powered Circuit for Gate Driving of Normally On Wide-Bandgap Transistors;IEEE Transactions on Power Electronics;2024-04

2. Comparison of Si SJMOS and SiC MOSFET for Single Phase PFC Application;IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society;2022-10-17

3. AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET;IEEJ Transactions on Electrical and Electronic Engineering;2020-09-28

4. Energy storage system: Current studies on batteries and power condition system;Renewable and Sustainable Energy Reviews;2018-02

5. A Dual-Mode Driver IC With Monolithic Negative Drive-Voltage Capability and Digital Current-Mode Controller for Depletion-Mode GaN HEMT;IEEE Transactions on Power Electronics;2017-01

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