A High-Q In-Silicon Power Inductor Designed for Wafer-Level Integration of Compact DC

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A High-Q In-Silicon Power Inductor Designed for Wafer-Level Integration of Compact DC–DC Converters

Published:2017-05 Issue:5 Volume:32 Page:3858-3867
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Li Jiping^ORCID,Tseng Victor Farm-Guoo,Xiao Zhiming,Xie Huikai

Funder

Department of Energy

ARPA-E Cooperative Agreement

Linear Technology Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://ieeexplore.ieee.org/ielaam/63/7840061/7506300-aam.pdf

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A MEMS Spiral Power Inductor with A Magnetic Core for DC-DC Converters;2024 IEEE 19th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS);2024-05-02

2. High-Performance 3-D Silicon-Embedded Coupled Solenoid Inductors With Inserted Magnetic Core;IEEE Transactions on Electron Devices;2024-05

3. Unleashing the Performance of Self‐Rolled‐Up 3D Inductors via Deterministic Electroplating on Cylindrical Surfaces;Advanced Materials Technologies;2024-03-18

4. Flexible Mini‐Inductors with Ultra‐High Inductance Density Directly Cut from Soft Magnetic Amorphous Alloys by Femtosecond Laser;Advanced Functional Materials;2024-03-07

5. Polymer-Assisted 3D Printing of Inductor Cores;ACS Applied Materials & Interfaces;2024-02-13

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