Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic on-Resistance in GaN HEMTs-Reference-Cited by-同舟云学术

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Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic on-Resistance in GaN HEMTs

Published:2019-10 Issue:10 Volume:34 Page:10121-10135
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Yang Fei^ORCID,Xu Chi,Akin Bilal^ORCID

Funder

National Science Foundation

Semiconductor Research Corporation/Texas Analog Center of Excellence

Texas Instruments Foundational Technology Research Center on Power Density

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

https://ieeexplore.ieee.org/ielaam/63/8752491/8601347-aam.pdf

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Power Cycling Degradation on the Dynamic ON-Resistance of HD-GITs;IEEE Transactions on Industrial Electronics;2024-11

2. Impact of $V_\mathsf {th}$ Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors;IEEE Transactions on Power Electronics;2024-09

3. A 3 kW GaN HEMT Based Three-Phase Converter Achieving a Switching Frequency of 300 kHz and an Efficiency of 97.06%;IEEE Access;2024

4. A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution;IEEE Transactions on Power Electronics;2024-01

5. Investigation on Dynamic On-Resistance of GaN Power Devices Using Double Pulse Test;Lecture Notes in Electrical Engineering;2024

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